| 摘要 |
<p>A resistive element including a P-channel MOS device (101, 401, 402, 608a-608c) having a first and second current carrying electrodes, and a gate. The first current carrying electrode forms a first impedance terminal and the second current carrying electrode forms a second impedance terminal. A bias circuit (103, 104, 105, 106) coupled to the first current carrying electrode and gate of the P-channel MOS device (101, 401, 402, 608a-608c). The bias circuit (103, 104, 105, 106) generates a voltage less than the threshold voltage of the P-channel MOS device (101, 401, 402, 608a-608c). <IMAGE></p> |
