METHOD FOR FABRICATING INTERCONNECTION OF SEMICONDUCTOR DEVICE HAVING SMOOTH TUNGSTEN SURFACE

摘要

PURPOSE: A method for fabricating an interconnection of a semiconductor device having a smooth tungsten surface is provided to solve a residue problem and an alignment problem, by eliminating all of a lower conductive layer having a rough surface and excellent step coverage except the inside of a via hole so that the via hole is completely buried by the lower conductive layer and a void is not generated. CONSTITUTION: An insulation layer(105) is formed on a substrate(101). The via hole is formed in the insulation layer. The lower conductive layer(117) is formed on the insulation layer and inside the via hole. A part of the lower conductive layer is eliminated to form a plug in the via hole. An upper conductive layer(119) is formed on the plug and the insulation layer. The surface of the lower conductive layer is rougher than that of the upper conductive layer.