| 摘要 |
PURPOSE: A method for fabricating a transistor of a semiconductor device is provided to form a fine transistor by overcoming the limit of equipment, to improve the characteristic of the transistor and to easily perform a process for fabricating a memory device. CONSTITUTION: An isolation region is formed. A well region(14) is formed by an ion implantation process. A window is formed in a region corresponding to a gate formation region by using a reverse poly mask. The window region is etched to form the gate formation region. The reverse poly mask is eliminated to deposit an oxide layer. The oxide layer is etched back to form a spacer(22). A gate oxide layer(24) and a gate poly layer are deposited. The gate oxide layer and the gate poly layer are polished by a chemical physical polishing method. Ions are implanted into the well region to define a source/drain region(30,32). Electrodes(28D,28G,28S) are formed in the gate poly layer and the source/drain region.
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