发明名称 |
DIELECTRIC COMPOSITION FOR Y5V LAYERED CHIP CAPACITY WITH NI USED AS INTERNAL ELECTRODE |
摘要 |
PURPOSE: Provided is a dielectric composition for Y5V layered chip capacity with Ni used as an internal electrode which adds a certain quantity of NiO to BCSTZ or BCTZ basic composition so that it guarantees excellent insulation property with minimizing the reduction of dielectric constant. CONSTITUTION: The dielectric composition for Y5V layered chip capacity with Ni used as the internal electrode contains (Ba1-x-yCaxSry)m(Ti1-zZrz)O3 as a basic component with meeting 0.05<=x<=0.07mol%, 0.09<=y<=0.10mol%, 0.12<=z<=0.18mol% and 1 <=m<=1.05mol%. The dielectric composition is characterized by including 0.1-0.5wt% of NiO; not less than one materials from HfO2, MnO2 and ZrO2; and not less than one material from Y2O3, V2O5, Al2O3 and Er2O3.
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申请公布号 |
KR20020049677(A) |
申请公布日期 |
2002.06.26 |
申请号 |
KR20000078892 |
申请日期 |
2000.12.20 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
HUH, GANG HEON;LEE, JONG YEON;LEE, SANG PYO;SON, HUI YEONG |
分类号 |
C04B35/468;H01G4/12;(IPC1-7):C04B35/468 |
主分类号 |
C04B35/468 |
代理机构 |
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