| 摘要 |
PROBLEM TO BE SOLVED: To provide a practical clogging technique of a micropipe in a silicon carbide substrate having the micropipe. SOLUTION: When SiC substrate temperature is a high temperature in the order of 1800 deg.C, the sublimation of SiC from a SiC substrate 10 is generated. Therein, surface temperature of the SiC substrate is lower than back surface temperature thereof, therefore, the gas sublimated from the vicinity 12b of the back surface of the substrate having a high temperature is moved to the vicinity 12a of the surface of the substrate having a low temperature through a micropipe defect 11 which is hollow. At this time, on the surface side of the substrate, the epitaxial growth proceeds by a CVD method, the gas of SiC sublimated from the vicinity 12b of the back surface of the substrate is recrystalized in the vicinity 12a of the surface of the substrate and the micropipe defect 11 is clogged. |
