METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE BY USING TWO-STEP HEAT TREATMENT

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor memory device by using a two-step heat treatment process is provided to improve a leakage current characteristic and a dielectric characteristic, by obtaining a sufficient curing effect of a dielectric layer while not oxidizing the surface of an upper electrode. CONSTITUTION: A lower electrode(20) is formed on a semiconductor substrate(10). The dielectric layer(40) is formed on the lower electrode. An upper electrode(50) made of a noble metal is formed on the dielectric layer. The first heat treatment process is performed on the resultant structure including the upper electrode in the first atmosphere including oxygen and at the first temperature within a range from 200 to 600 deg.C such that the first temperature is lower than the oxidation temperature of the upper electrode. The second heat treatment process(54) is performed on the resultant structure in the second atmosphere including oxygen and at the second temperature within a range from 300 to 900 deg.C such that the second temperature is higher than the first temperature.