METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to perform planarization in a control gate line process, by patterning a floating gate so that the floating gate has a space narrower than a pattern space of a real mask. CONSTITUTION: A photoresist layer(5) is deposited on a substrate and an exposure process is performed. A hexamethyldisiloxane(HMDS) treatment process is performed regarding the photoresist layer. The photoresist layer is cooled and developed. The HMDS treatment process is performed at a temperature not lower than 90 deg.C for 90 seconds or more. The photoresist is cooled in a cooling plate for 60 seconds or more.