| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device is provided to control generation of a defect caused by compress stress of a nitride layer itself, by using a dummy landing plug as a barrier layer of a metal contact in a peripheral circuit region instead of using the nitride layer. CONSTITUTION: Transistors are formed in a cell region and the peripheral circuit region. The first insulation layer is formed and a landing plug contact region is formed. A material layer for forming a landing plug is deposited and planarized to form the landing plug in the cell region and the dummy landing plug in the peripheral circuit region. The second insulation layer is formed. A bit line contact pad and a bit line which are in contact with the landing plug at one side of the transistor are formed. The third and fourth insulation layers are formed. An upper plug in contact with the landing plug at the other side of the transistor is formed and the fifth insulation layer is formed. A capacitor formation region is defined to expose the upper plug. A lower electrode, a dielectric layer and an upper electrode are formed. The sixth insulation layer(28) is formed. Metal contact holes in the peripheral circuit region are formed to remove the dummy landing plug by using the first metal contact mask(29). The second metal contact mask is formed. Metal contact holes in the cell region are formed by using the second metal contact mask.
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