| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve a characteristic by preventing a defect of a conductive layer gate in eliminating an organic anti-reflective coating(ARC), and to prevent gas condensation by performing processes in the same chamber. CONSTITUTION: A polysilicon layer and the organic ARC are sequentially deposited on a semiconductor substrate(11). A photoresist layer is applied on the organic ARC. The photoresist layer is patterned to expose a predetermined region of the organic ARC. A polymer sidewall is formed on both side surfaces of the patterned photoresist layer by a polymer generation process performed regarding the organic ARC while the polysilicon layer under both sides of the polymer sidewall is exposed. The exposed polysilicon layer is eliminated to form the conductive layer gate(13a) by using the patterned photoresist layer and the polymer sidewall as a mask. The photoresist layer and the organic ARC are simultaneously removed. The polymer sidewall is removed.
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