METHOD FOR FABRICATING METAL SILICATE LAYER FOR GATE INSULATION LAYER

摘要

PURPOSE: A method for fabricating a metal silicate layer for a gate insulation layer is provided to form a hafnium silicate layer having an excellent characteristic and a high dielectric constant, by making a thermal oxide layer react with a hafnium oxide layer. CONSTITUTION: A silicon substrate(1) is prepared on which field oxide layers for defining an active region is formed. A predetermined thickness of the thermal oxide layer is grown on the active region of the silicon substrate. A metal oxide layer having a high dielectric constant is deposited on the thermal oxide layer by a predetermined thickness. A heat treatment process is performed regarding the resultant structure so that the metal oxide layer reacts with the thermal oxide layer to form the metal silicate layer.