发明名称 POSITIVE TYPE RESIST COMPOSITION FOR ELECTRON BEAM OR X- RAY
摘要 PROBLEM TO BE SOLVED: To enhance performance in the microfabrication of a semiconductor device using electron beams or X-rays and to provide a positive type resist composition for electron beams or X-rays which satisfies sensitivity, resolution and resist shape to the use of electron beams or X-rays. SOLUTION: The positive type resist composition for electron beams or X-rays contains (A) a resin having at least one of specified repeating units of formula (III) or (IV) and (B) a compound having a disulfone group.
申请公布号 JP2002182392(A) 申请公布日期 2002.06.26
申请号 JP20000376059 申请日期 2000.12.11
申请人 FUJI PHOTO FILM CO LTD 发明人 AOSO TOSHIAKI
分类号 G03F7/039;C07C381/00;C08K5/41;C08L101/12;G03F7/004;H01L21/027 主分类号 G03F7/039
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