发明名称 |
THIN WAFER AND FABRICATING METHOD THEREOF |
摘要 |
PURPOSE: A thin wafer is provided to miniaturize the size of a single package and a stack package in which a plurality of semiconductor chips are stacked, by preventing a semiconductor substrate from being warped even when the thin wafer is reduced or expanded within a predetermined temperature scope and by minimizing the thickness of the semiconductor chip separated from the thin wafer. CONSTITUTION: An integrated circuit is formed on the front surface of a semiconductor substrate(110). A polyimide film(120) is coated on the front surface. A warpage correcting film is coated on the rear surface of the semiconductor substrate. The thermal expansion coefficient of the warpage correcting film corrects the degree of the warpage of the semiconductor substrate by using the difference of the thermal expansion coefficients between the polyimide film and the semiconductor substrate.
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申请公布号 |
KR20020049720(A) |
申请公布日期 |
2002.06.26 |
申请号 |
KR20000078981 |
申请日期 |
2000.12.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HYEON GI;SHIN, UN HA |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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主权项 |
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地址 |
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