Rapid cooling of cz silicon crystal growth system

摘要

A Czochralski method for producing monocrystals wherein a single crystal silicon rod (13) is pulled from a silicon melt (9) contained in a crucible (3) within a chamber (1). After pulling the single crystal silicon rod (13) from a silicon melt (9) in a chamber (1), the chamber (1) is cooled by flowing a gas having a thermal conductivity of at least about 55x10<-5> g.cal./(sec. &cirf& cm<2>) ( DEG C/cm) at 800 DEG K into the chamber (1). The preferred cooling gas is a helium-containing gas.