| 摘要 |
PURPOSE: A switching circuit for power supply is provided, which obtains a stable internal voltage(Vdd), by providing a high voltage(Vpp2) having a constant voltage level, to prevent an internal voltage(Vcore) of a memory core from being decreased because of the decrease of the high voltage. CONSTITUTION: The switching circuit for power supply of a semiconductor memory device comprises a clamp device part transporting an external power supply voltage(Vdd) as an internal voltage(Vcore) of a memory core by the first high voltage having a constant voltage level. The first high voltage is generated by the first high voltage generation circuit comprising a number of NMOS transistors connected in a diode structure between the first high voltage and the second high voltage used for driving a word line. The first high voltage does not increase above integer-times of a threshold voltage of the above NMOS transistors. The clamp device part is constituted with an NMOS transistor(MN2).
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