| 摘要 |
PROBLEM TO BE SOLVED: To obtain a new polymer compound useful as a base polymer for chemically amplified resist material with excellent transmittance to vacuum UV rays, to obtain a chemically amplified resist material comprising the polymer compound, and to provide a method for patterning using the resist material. SOLUTION: This polymer compound has a group expressed by the general formula (1) (where R1 and R2 each represents a hydrogen atom, a fluorine atom, a linear or branched alkyl group having 1 to 20 carbons or a fluorized alkyl group, provided that at least one of R1 and R2 contains a fluorine, and R represents a cyclic alkyl group formed from at least a ring having 3 to 20 carbons). This resist material senses high energy beam, having excellent sensitivity to a wavelength below 200 nm, especially below 170 nm, having improved plasma etching resistance together with excellent resolvability due to introduction of a cyclic alkyl group into the ester side chain. |
