| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-evacuated plasma treatment apparatus capable of depositing a high quality film by preventing the sticking of powder of a reaction product or a film on an electrode or the like and an abnormal rise of temperature of electrode or a base body, and a thin film depositing method and a surface treatment method using the apparatus. SOLUTION: The inside of an apparatus main body vessel 5 is separated into a 1st space and a 2nd space across a ground electrode 3, a high frequency electrode (or DC high voltage electrode) 4 facing the ground electrode is provided to form a discharge region in the 1st space and a mounting plate 13 for the base body, which faces the ground electrode and has a heating means, is provided in the 2nd space and the thin film is deposited on the surface of the base body 11 arranged in the 2nd space by supplying gas for discharge such as hydrogen to the 1st space to generate atomic hydrogen by the plasma discharge under a non-evacuated state, introducing the atomic hydrogen to the 2nd space through a plurality of gas holes 12 provided on the ground electrode and reacting with a semiconductor gas molecule supplied to the 2nd space. |
