METHOD OF FABRICATING THIN FILM TRANSISTOR LIQUID CRYSTAL DISPLAY

摘要

PURPOSE: A method of fabricating a thin film transistor liquid crystal display is provided to protect Al from being oxidized in oxygen ambient and to prevent hillock from being created on Al surface. CONSTITUTION: An ITO is deposited on a transparent insulating substrate(10) and etched to form the first ITO electrode. An opaque metal is deposited on the first ITO electrode and etched to form a gate electrode. Multiple layers are sequentially formed on the gate electrode and etched to form a gate insulating layer(13) and a channel layer. An opaque metal is deposited on the channel layer and patterned to form source and drain electrodes. A passivation layer(15) is formed on the source and drain electrodes and patterned to form a contact hole exposing a portion of the gate line. SF6 plasma process is performed for the exposed portion of the gate line. The second ITO layer(23) is formed on the plasma-processed gate line.