| 摘要 |
PURPOSE: A semiconductor memory device is provided, which improves an operation speed of the device by enabling to reflect a change of a word line enable timing according to operation conditions like an operation voltage, a process and an operation temperature on driving a sense amplifier, and makes it easy to design EML(Embedded Memory Logic). CONSTITUTION: The semiconductor memory device includes a memory cell block(10), a sense amplifier block(11) and at least one memory block unit comprising a sense amplifier driver(SD1). And all memory cell blocks share a word line. One memory block unit(12) comprises a sensing block(14) sensing a word line enable state and a signal amplifier(17) amplifying an output signal of the sensing block. The sensing block is formed between the memory cell blocks(15,16), and the signal amplifier is formed between sense amplifier blocks(18,19) located on a cell core region. The sense amplifier blocks(8,19) include a proper number of sense amplifiers according to a bit line configuration of each of the memory cell blocks(15,16).
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