METHOD FOR PRODUCING BI2TE3 THERMOELECTRIC SEMICONDUCTOR MATERIALS USING MELT SPINNING AND HOT FORMING METHOD

摘要

PURPOSE: Provided is a method for producing Bi2Te3 thermoelectric semiconductor materials by using a melt spinning and hot forming method, thereby producing the thermoelectric semiconductor materials having high mechanical strength and improved thermoelectricity. CONSTITUTION: Bi2Te3 thermoelectric semiconductor materials are manufactured by the steps of: melting n type Bi2Se3 added Bi2Te3 alloy and p typed Bi2Te3 added Sb2Te3 alloy in a furnace under vacuum, or argon or nitrogen atmosphere, and subjecting the melted alloys to a melt spinning as a rapid coagulation method to produce a thermoelectric semiconductor material powder; reducing the produced thermoelectric semiconductor material powder; cool forming the reduced powder and removing gas from the reduced powder; and hot forming the cool forming thermoelectric semiconductor material powder.