| 摘要 |
PROBLEM TO BE SOLVED: To realize an inexpensive chemical image sensor which can process chemical image signals at a high speed and can be reduced in size. SOLUTION: The chemical image sensor is constituted by providing a sensitive section, a reference electrode, and a counter electrode on the gate film of a MOS type device provided on a semiconductor substrate and covering the section and electrodes with an electrolytic material. In order to enable the image sensor to use a surface photo voltage(SPV) method utilizing rear- surface irradiation, the semiconductor substrate is formed in a polygonal or circular shape and the chemical-species sensitive section, reference electrode, and counter electrode are provided on one surface of the substrate. A sensing area is provided by covering the section and electrodes with the electrolytic material and the opposite surface of the substrate is shielded from light. In addition, a chemical image is obtained on the semiconductor substrate from local chemical signals obtained by continuously successively irradiating the substrate with DC light through regularly provided many light transmitting windows. |
