| 摘要 |
Provided is a method for analyzing a wafer which does not need an additional heating process or an optical system, and does not occur peak interference or a raw material loss or volatilization due to a solvent, while analyzing a raw material remained in the wafer. The method for analyzing a wafer comprises the following steps: (a) coating a raw material on an experimental group wafer and drying the coated wafer; (b) preparing a control group wafer, and cutting a certain part of the experimental group and control group wafers; (c) analyzing the certain part of the cut experimental group and control group wafers with time of flight secondary ion mass spectrometry (TOF-SIMS); and (d) examining a region corresponding to a weight spectrum of the experimental group and control group wafers. |
