发明名称 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To provide an array substrate with which damage on a TFT(thin film transistor) caused by wet etching during contact hole formation in the array substrate is prevented and to provide a method used for manufacturing the same which are used for the flat display device etc. SOLUTION: Both the distance from the edge of the channel part 71 of a TFT 7 to the edge of a contact hole 42 between a source and a pixel electrode and the distance from the edge of the channel part 71 of the TFT 7 to the edge of a contact hole 41 for the redundant wiring of a signal line 31 are set to be greater than 8μm. In particular, the source-pixel electrode contact hole 42 is disposed on the source electrode-side terminal 62 of a repair circuit 6, and the contact hole 41 for redundant wiring is disposed on the signal line-side terminal 61 of the repair circuit 6.</p>
申请公布号 JP2002182241(A) 申请公布日期 2002.06.26
申请号 JP20000379412 申请日期 2000.12.13
申请人 TOSHIBA CORP 发明人 HIRAHARA HARUAKI;UESONO SHIGEHIRO
分类号 G02F1/1368;G09F9/30;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/1368
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