发明名称 |
ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide an array substrate with which damage on a TFT(thin film transistor) caused by wet etching during contact hole formation in the array substrate is prevented and to provide a method used for manufacturing the same which are used for the flat display device etc. SOLUTION: Both the distance from the edge of the channel part 71 of a TFT 7 to the edge of a contact hole 42 between a source and a pixel electrode and the distance from the edge of the channel part 71 of the TFT 7 to the edge of a contact hole 41 for the redundant wiring of a signal line 31 are set to be greater than 8μm. In particular, the source-pixel electrode contact hole 42 is disposed on the source electrode-side terminal 62 of a repair circuit 6, and the contact hole 41 for redundant wiring is disposed on the signal line-side terminal 61 of the repair circuit 6.</p> |
申请公布号 |
JP2002182241(A) |
申请公布日期 |
2002.06.26 |
申请号 |
JP20000379412 |
申请日期 |
2000.12.13 |
申请人 |
TOSHIBA CORP |
发明人 |
HIRAHARA HARUAKI;UESONO SHIGEHIRO |
分类号 |
G02F1/1368;G09F9/30;H01L29/786;(IPC1-7):G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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