SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes an active fin which protrudes from a substrate and is extended in a direction, a first device isolation layer which is extended from a side of the active fin to intersect with the active fin, a normal gate which is extended from the active fin to intersect with the active fin, a first dummy gate which is extended in parallel to the first device isolation layer on the first device isolation layer and has an undercut on a lower part thereof, and a first filler which is formed on the first device isolation layer and is filled in the undercut of the first dummy gate. So, the reliability of products can be improved.