| 摘要 |
A method of producing a semiconductor layer onto a semiconductor substrate, comprising the steps of : Providing a first semiconductor substrate (1), Providing a second semiconductor substrate (5), Producing a porous layer (6,7,8) on top of said second semiconductor substrate, said layer having a porosity profile, Bringing said porous layer of said second substrate (5) into contact with said first substrate (1), so as to form a bond between said two substrates, Performing a thermal annealing step, Lifting off of said second substrate, leaving a layer of said second substrate's semiconductor material attached to said first substrate. <IMAGE> |
