发明名称 Process for removing photoresist material
摘要 A process for removing photoresist material without any residues left and damage to the in-process substrate is described. The present process for removing photoresist on an in-process substrate comprises the steps of providing a cover layer which is to be etched on the in-process substrate and providing a layer of photoresist material thereon. The photoresist layer is patterned, exposed and developed. Then, the developed photoresist layer is further exposed without using a mask. The cover layer is etched with the use of the patterned photoresist layer. After etching, the photoresist material is removed by a solvent.
申请公布号 US6410447(B2) 申请公布日期 2002.06.25
申请号 US19990231537 申请日期 1999.01.14
申请人 UNITED MICROELECTRONICS CROP. 发明人 PAI YUAN-CHI;CHENG LUNG-YI;LI CHENG-CHE;LIN WEI-CHIANG
分类号 H01L21/027;H01L21/311;(IPC1-7):H01L21/302 主分类号 H01L21/027
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