发明名称 |
Process for removing photoresist material |
摘要 |
A process for removing photoresist material without any residues left and damage to the in-process substrate is described. The present process for removing photoresist on an in-process substrate comprises the steps of providing a cover layer which is to be etched on the in-process substrate and providing a layer of photoresist material thereon. The photoresist layer is patterned, exposed and developed. Then, the developed photoresist layer is further exposed without using a mask. The cover layer is etched with the use of the patterned photoresist layer. After etching, the photoresist material is removed by a solvent.
|
申请公布号 |
US6410447(B2) |
申请公布日期 |
2002.06.25 |
申请号 |
US19990231537 |
申请日期 |
1999.01.14 |
申请人 |
UNITED MICROELECTRONICS CROP. |
发明人 |
PAI YUAN-CHI;CHENG LUNG-YI;LI CHENG-CHE;LIN WEI-CHIANG |
分类号 |
H01L21/027;H01L21/311;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/027 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|