| 摘要 |
It is an object of the present invention, when forming a high-density plasma CVD film, to suppress the production of particles, which are the cause of unsatisfactory formation of a micropattern, without causing a drop in productivity, and thus improve the yield of a semiconductor device. For this purpose, a CVD film is formed on a predetermined plurality of semiconductor substrates by repeating, in order, a process #101a in which a plasma CVD film is formed on a semiconductor substrate, and a process #101b in which low-pressure cleaning of the inside of a reaction chamber is performed by way of exhaustion to a first exhaust line on which a turbo pump employed in #101a is placed. In this manner, reactant, which has adhered to the first exhaust line, can be removed during the low-pressure cleaning. Cleaning of a second exhaust line or rough exhaust line, which does not have a turbo pump placed thereon, is performed as a result of the cleaning of the inside of the reaction chamber using this rough exhaust line, at least before or after the formation of a CVD film on a plurality of semiconductor substrates, for example, in processes #100 and #151.
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