发明名称 |
Positive photoresist composition |
摘要 |
A positive photoresist composition comprising (A) a compound which generates a sulfonic acid having naphthalene structure by the irradiation with actinic rays of a wavelength of 220 nm or less or radiation, and (B) a resin whose solubility in an alkali developing solution increases by the action of an acid is disclosed.
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申请公布号 |
US6410204(B1) |
申请公布日期 |
2002.06.25 |
申请号 |
US20000669907 |
申请日期 |
2000.09.27 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
KODAMA KUNIHIKO;SATO KENICHIRO;AOAI TOSHIAKI |
分类号 |
H01L21/027;G03F7/004;G03F7/039;(IPC1-7):G03F7/004 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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