发明名称 Positive photoresist composition
摘要 A positive photoresist composition comprising (A) a compound which generates a sulfonic acid having naphthalene structure by the irradiation with actinic rays of a wavelength of 220 nm or less or radiation, and (B) a resin whose solubility in an alkali developing solution increases by the action of an acid is disclosed.
申请公布号 US6410204(B1) 申请公布日期 2002.06.25
申请号 US20000669907 申请日期 2000.09.27
申请人 FUJI PHOTO FILM CO., LTD. 发明人 KODAMA KUNIHIKO;SATO KENICHIRO;AOAI TOSHIAKI
分类号 H01L21/027;G03F7/004;G03F7/039;(IPC1-7):G03F7/004 主分类号 H01L21/027
代理机构 代理人
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