| 摘要 |
A method for manufacturing a conductive strip includes forming a doped dielectric layer along a surface of a trench. Then, an ion-implanted-sensitive resist is formed over the doped dielectric layer. Next step is to implant ions into the ion-implanted-sensitive resist by substantially vertical implantation such that the ion-implanted-sensitive resist over the lower and upper horizontal surfaces is insoluble portions in a developer and the vertical surface is soluble in the developer. Subsequently, the vertical surface is removed by using the developer and then the doped dielectric layer attached on the vertical surface is also removed. Then, a CMP process is used to remove the ion-implanted-sensitive resist and the doped dielectric layer. Next, a thermal treatment is used to diffuse the dopants in the doped dielectric layer into the lower horizontal surface.
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