发明名称 |
Method and apparatus for a gaseous environment providing improved control of CMP process |
摘要 |
A method of using a gaseous environment providing improved control of CMP process. In one embodiment, the method comprises several steps. One step involves placing a semiconductor wafer onto a polishing pad of a CMP machine. A subsequent step dispenses a slurry onto the polishing pad. Another step provides a blanket of gas that displaces the ambient atmosphere surrounding the semiconductor wafer. In another step, the blanket of gas is maintained around the semiconductor wafer during the CMP operation.
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申请公布号 |
US6410440(B1) |
申请公布日期 |
2002.06.25 |
申请号 |
US19990305977 |
申请日期 |
1999.05.05 |
申请人 |
VLSI TECHNOLOGY, INC. |
发明人 |
DRILL CHARLES F.;WELING MILIND |
分类号 |
B24B37/04;H01L21/3105;H01L21/321;(IPC1-7):H01L21/302 |
主分类号 |
B24B37/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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