发明名称 |
Technology for thermodynamically stable contacts for binary wide band gap semiconductors |
摘要 |
A thermodynamically stable metallic contact for binary oxide-, nitride-, carbide or phosphide-semiconductors and a method of its preparation, the contact is formed in a high temperature reaction in vacuum of a metal bi-layer with the binary semiconductor substrate. With a proper choice of the two metallic layers, each metal forms a single phase with only one of binary semiconductor elements. The resulting phases form distinct layers in a thermodynamically stable sequence.
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申请公布号 |
US6410460(B1) |
申请公布日期 |
2002.06.25 |
申请号 |
US20000570812 |
申请日期 |
2000.05.15 |
申请人 |
RAMOT UNIVERSITY AUTHORITY FOR APPLIED RESEARCH AND INDUSTRIAL DEVELOPMENT LTD.;TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD. |
发明人 |
SHALISH ILAN;SHAPIRA YORAM;EIZENBERG MOSHE |
分类号 |
H01L21/04;H01L21/285;H01L29/20;H01L29/24;H01L29/45;H01L29/47;(IPC1-7):H01L21/31;H01L21/469;H01L21/44 |
主分类号 |
H01L21/04 |
代理机构 |
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