| 摘要 |
A method for fabricating a nitride-semiconductor laser constituted by superimposing a plurality of crystal layers respectively made of a group III nitride semiconductor (AlxGa1-x)1-YInyN (0<=x<=1, 0<=y<=1) on a cleavable or parting substrate in order comprises the crystal layer forming step of forming a plurality of crystal layers on a cleavable or parting substrate, the step of applying a light beam from the substrate side toward the interface between the substrate and the crystal layers and thereby forming the decomposed-matter area of the nitride semiconductor, and the step of cleaving or parting the substrate along a straight line intersecting with the decomposed-matter area and thereby forming a cleavage plane.
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