发明名称 Polishing slurries for copper and associated materials
摘要 A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
申请公布号 US6409781(B1) 申请公布日期 2002.06.25
申请号 US20000562298 申请日期 2000.05.01
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 WOJTCZAK WILLIAM A.;BAUM THOMAS H.;NGUYEN LONG;REGULSKI CARY
分类号 C09C1/68;C09G1/02;H01L21/321;(IPC1-7):C09K3/14;C09G1/04 主分类号 C09C1/68
代理机构 代理人
主权项
地址