Method of manufacturing Ta2O5capacitor using Ta2O5thin film as dielectric layer

摘要

The present invention discloses a method of manufacturing a Ta2O5 capacitor with high capacitance using a Ta2O5 thin film as a dielectric layer. The method according to the present invention, comprising the steps of: providing a semiconductor substrate over which selected lower patterns are formed and an intermediate insulating layer is covered; forming a lower electrode on the intermediate insulating layer; nitrifying the surface of the lower electrode; depositing a Ta2O5 thin film in an amorphous state on the nitrified surface of the lower electrode; annealing the amorphous Ta2O5 thin film at a low temperature; annealing the low thermal annealed amorphous Ta2O5 thin film at a high temperature so as to form a crystalline Ta2O5 thin film as a dielectric layer; and forming an upper electrode on the dielectric layer made of the crystalline Ta2O5 thin film.