| 摘要 |
A bias circuit (200, FIG. 2) includes a first bipolar junction transistor (BJT) (240), which provides, to an external transistor (204), a biasing voltage (294) equal to the first BJT's base-emitter junction voltage plus a biasing voltage at the first BJT's base (244). A current multiplying mirror circuit (250) senses a fraction of the first BJT's collector current, and produces a current equal to the collector current. This mirror current flows through a second BJT (230). A voltage at the collector (232) of the second BJT is divided, producing the biasing voltage at the base (244) of the first BJT. This biasing voltage has a temperature coefficient with an opposite sign and a same magnitude as a temperature coefficient of the first BJT's base-emitter junction voltage, resulting in a near zero temperature coefficient for the biasing voltage (294).
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