| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing pad having a small global level difference, hardly causing dishing in a metal wire, and scarcely causing dust and clutch in the polishing pad mechanically flattening the surface of an insulating layer or the metal wire formed on a silicon substrate. SOLUTION: This polishing pad is characterized in that the micro rubber A hardness is 80 deg. or more, a tensile storage elasticity modulus of frequency 10 Hz under the temperature 120 deg.C is not less than 40 MPa and not more than 500 MPa, and a loss tangent, or the ratio of the tensile storage elasticity modulus to the tensile loss elasticity modulus, is 0.12 or more. |
