发明名称 Semiconductor device
摘要 A semiconductor device is provided, in which a first lead (11) is joined with the bottom electrode (23) of a MOS-FET (21) with first solder (51), the top electrode (22) of the MOS-FET is joined with an internal lead (31) with second solder (52), the internal lead is joined with a projection (61) of a second lead with third solder (53), and the first lead, second lead, MOS-FET and internal lead are integrally molded using sealing resin (41), wherein the first solder and second solder include support members (54) and (55), respectively, located thereinside and positions of the internal lead and MOS-FET are stabilized by self-alignment.
申请公布号 US9401319(B2) 申请公布日期 2016.07.26
申请号 US201113980997 申请日期 2011.06.09
申请人 Mitsubishi Electric Corporation 发明人 Oga Takuya;Sakamoto Kazuyasu;Sugihara Tsuyoshi;Kato Masaki;Nakashima Daisuke;Jida Tsuyoshi;Tada Gen
分类号 H01L23/48;H01L23/495;H01L23/00;H01L23/31;H01L25/11 主分类号 H01L23/48
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A semiconductor device including: a first lead; a second lead including a projection which is formed on a non-edge region of the second lead; a MOS-FET whose bottom electrode is electrically connected to the first lead; an internal lead that conducts current between a top electrode of the MOS-FET and the second lead; solder for electrically connecting those parts with each other; and sealing resin for determining relative positions of the parts; wherein: bottom surfaces of the first lead and the second lead are in the same plane, joint surfaces between the internal lead and the MOS-FET and between the internal lead and the second lead are also in the same plane, the first lead is joined with the bottom electrode of the MOS-FET with first solder, the top electrode of the MOS-FET is joined with the internal lead with second solder, the internal lead is joined with the projection of the second lead with third solder, and the first lead, the second lead, the MOS-FET and the internal lead are integrally molded using the sealing resin; the semiconductor device comprising support members each located inside at least the first solder and the second solder; a contact portion of the internal lead is disposed on the projection of the second lead which is protruded in a direction toward the internal lead; and a non-contact portion of the internal lead is protruded in a direction away front the second lead and is not aligned with the projection of the second lead.
地址 Tokyo JP