| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same is provided to improve capacitance of a photodiode and a light sensitivity by increasing a generation of electron-hole pairs. CONSTITUTION: After forming a defined lower structure made of an epitaxial layer(31) isolation layers(32), a photodiode, a transistor and an interconnection on a semiconductor substrate(30), the rear surface of the semiconductor substrate(30) is polished. Then, an aluminum layer(41) is formed on the polished rear surface of the semiconductor substrate(30) by sputtering an Al and an USG(Undoped Silicate Glass) layer(42) is formed on the entire rear surface of the resultant structure. After forming a blue, a red, and a green color filters(B,R,G), an OCN(Over Coating Material) layer(39) is formed on the entire surface of the resultant structure. Then, a micro-lens(40) is formed. At this point, though an electron-hole pair is firstly not formed by an incident light in the photodiode region, the electron-hole pair is secondly formed through the aluminum layer(41), thereby increasing electron-hole pairs.
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