| 摘要 |
PURPOSE: A contact hole formation method of semiconductor devices is provided to prevent a damage of source and drain regions by minimize an etch time. CONSTITUTION: A photoresist pillar is formed on a contact hole formation region of a silicon substrate(6) having source and drain regions(4) and a gate(5). An oxide layer(7") is sufficiently deposited on the entire surface of the resultant structure. The resultant structure is planarized by polishing the oxide layer(7") using CMP(Chemical Mechanical Polishing) to expose the photoresist pillar. A contact hole(15) is formed by removing the exposed photoresist pillar.
|
