| 摘要 |
<p>PURPOSE:To enhance the performances of and the reliability upon vertical type semiconductor elements by a method wherein a hexagonal or octagonal pattern is adopted to make the shape of the peripheral part wherein a current is concentrated by surface effect approach to the true roundness. CONSTITUTION:A semiconductor substrate 1 bond-fixed on a glass-made supporter 17 together with a resist layer 18 on the surface are diced into small space Gunn diode groups in hexagonal sectional shape formed by dicing lines 5a, 5b, 6a, 6b, 7a, 7b down to a bonding agent layer 16 using a rotary diamond cutter 19. Next, the damaged layer caused by mechanical cutting-off step is removed by etching away the sides of the Gunn diode groups leaving them as fixed to the stopper 17. Later, when the small space Gunn diode groups are taken out of the supporter 17, the Gunn diodes having semiconductor layers almost in circular cylindrical sectional shape and electrodes in hexagonal dicing pattern can be manufactured thereby enabling the performances of and the reliability upon the vertical semiconductor elements to be enhanced.</p> |
