METHOD FOR FORMING POROUS DIELECTRIC MATERIAL LAYER IN SEMICONDUCTOR DEVICE AND DEVICE FORMED

摘要

PURPOSE: A method for forming a porous dielectric material layer in an electronic structure is provided that are not subjected to attack by reactive ion etching gases during a patterning process. CONSTITUTION: A method for forming a porous dielectric material layer in an electronic structure can be carried out by the steps of providing a pre-processed electronic substrate, depositing a layer of non-porous dielectric material on top of the pre-process electronic substrate, curing the electronic substrate at a first temperature typically about 250 °C, defining and patterning the layer of non-porous dielectric material, and curing the electronic substrate at a second temperature higher than the first temperature(typically about 350 °C to about 450 °C) transforming the non-porous dielectric material into a porous dielectric material.