| 摘要 |
PURPOSE: A formation method of a gate pattern of a flash memory device is provided to reduce a manufacturing time and a manufacturing processes and to minimize a contamination by forming a gate pattern through sequentially etching using an in-situ processing. CONSTITUTION: A gate oxide(102) formed by growing a thermal oxide, a floating gate layer(104) made of a first polysilicon, an insulating layer(105) made of an ONO(Oxide-Nitride-Oxide), a controlling gate layer(108) made of a second polysilicon(106) and a tungsten silicide layer(107) are sequentially deposited, then a reflection preventing layer(112) made of a SION(Silicon Oxy Nitride) for preventing a diffused reflection of a light source on the tungsten silicide layer(107) is formed on the resultant structure. The reflection preventing layer(112), the controlling gate layer(108), the insulating layer(105), the floating gate layer(104) and the gate oxide(102) are sequentially dry etched to form a gate pattern using a photoresist pattern(115) as a mask.
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