发明名称 |
POWER SUPPLY APPARATUS USING METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR |
摘要 |
PURPOSE: A power supply apparatus using a MOS-FET(Metal-Oxide Semiconductor Field-Effect Transistor) is provided to prevent the power loss by replacing a rectifier diode used in a secondary part of the power supply apparatus as the MOS-FET. CONSTITUTION: An AC(Alternating Current)/DC(Direct Current) conversion stage(20) converts AC power into DC power. A transformation and switching unit(21) transforms and switches the converted DC power. A power output unit(22) outputs and applies the transformed and switched DC power to a load. A power control unit(23) detects the DC power outputted and applied to the load and connects or breaks the switching unit(21). The power output unit(22) includes a MOS-FET for outputting and applying the switched DC power to the load.
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申请公布号 |
KR20020048816(A) |
申请公布日期 |
2002.06.24 |
申请号 |
KR20000078090 |
申请日期 |
2000.12.18 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
KIM, HYEONG CHEOL |
分类号 |
H02M3/335;(IPC1-7):H02M3/335 |
主分类号 |
H02M3/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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