发明名称 POWER SUPPLY APPARATUS USING METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
摘要 PURPOSE: A power supply apparatus using a MOS-FET(Metal-Oxide Semiconductor Field-Effect Transistor) is provided to prevent the power loss by replacing a rectifier diode used in a secondary part of the power supply apparatus as the MOS-FET. CONSTITUTION: An AC(Alternating Current)/DC(Direct Current) conversion stage(20) converts AC power into DC power. A transformation and switching unit(21) transforms and switches the converted DC power. A power output unit(22) outputs and applies the transformed and switched DC power to a load. A power control unit(23) detects the DC power outputted and applied to the load and connects or breaks the switching unit(21). The power output unit(22) includes a MOS-FET for outputting and applying the switched DC power to the load.
申请公布号 KR20020048816(A) 申请公布日期 2002.06.24
申请号 KR20000078090 申请日期 2000.12.18
申请人 LG ELECTRONICS INC. 发明人 KIM, HYEONG CHEOL
分类号 H02M3/335;(IPC1-7):H02M3/335 主分类号 H02M3/335
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