发明名称 |
GATE DRIVING CIRCUIT |
摘要 |
The present invention relates to a gate driving circuit with reduced fraction defective. Each driving stage of the gate driving circuit includes a first output transistor, a capacitor, a first control transistor, and a second control transistor. The first output transistor includes a control electrode connected to a first node. The first control transistor outputs a first control signal controlling electric potential of the first node to a second node before a k^th gate signal is output. The second control transistor is diode-connected between the second node and the first node to form a current path from the second node to the first node. After the first control signal is applied to the second node, the second control signal synchronized to the k^th gate signal is applied to the second node. |
申请公布号 |
KR20160090470(A) |
申请公布日期 |
2016.08.01 |
申请号 |
KR20150010221 |
申请日期 |
2015.01.21 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
CHO, DUC HAN;KIM, BEOM JUN;KIM, YOON HO;TAKEUCHI NOBORU;KIM, KANG NAM |
分类号 |
G09G3/20;G09G3/32;G09G3/36 |
主分类号 |
G09G3/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|