发明名称 GATE DRIVING CIRCUIT
摘要 The present invention relates to a gate driving circuit with reduced fraction defective. Each driving stage of the gate driving circuit includes a first output transistor, a capacitor, a first control transistor, and a second control transistor. The first output transistor includes a control electrode connected to a first node. The first control transistor outputs a first control signal controlling electric potential of the first node to a second node before a k^th gate signal is output. The second control transistor is diode-connected between the second node and the first node to form a current path from the second node to the first node. After the first control signal is applied to the second node, the second control signal synchronized to the k^th gate signal is applied to the second node.
申请公布号 KR20160090470(A) 申请公布日期 2016.08.01
申请号 KR20150010221 申请日期 2015.01.21
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 CHO, DUC HAN;KIM, BEOM JUN;KIM, YOON HO;TAKEUCHI NOBORU;KIM, KANG NAM
分类号 G09G3/20;G09G3/32;G09G3/36 主分类号 G09G3/20
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