发明名称 A METHOD OF MEASURING A STRENGTH OF A WAFER
摘要 The present invention provides a method for measuring strength of a wafer, which comprises the following steps of: measuring first flatness of a wafer; forming first and second layers on the front side of the wafer; measuring second flatness of the wafer, wherein the first and second layers are formed on the front side of the wafer; measuring flatness difference between the first flatness and second flatness; and determining the strength of the wafer based on the measured flatness difference.
申请公布号 KR20160090537(A) 申请公布日期 2016.08.01
申请号 KR20150010440 申请日期 2015.01.22
申请人 LG SILTRON INCORPORATED 发明人 JEONG, TAEK SANG;LEE, SEUNG WOOK;KIM, SEUNG HYUN
分类号 H01L21/66 主分类号 H01L21/66
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