发明名称 |
A METHOD OF MEASURING A STRENGTH OF A WAFER |
摘要 |
The present invention provides a method for measuring strength of a wafer, which comprises the following steps of: measuring first flatness of a wafer; forming first and second layers on the front side of the wafer; measuring second flatness of the wafer, wherein the first and second layers are formed on the front side of the wafer; measuring flatness difference between the first flatness and second flatness; and determining the strength of the wafer based on the measured flatness difference. |
申请公布号 |
KR20160090537(A) |
申请公布日期 |
2016.08.01 |
申请号 |
KR20150010440 |
申请日期 |
2015.01.22 |
申请人 |
LG SILTRON INCORPORATED |
发明人 |
JEONG, TAEK SANG;LEE, SEUNG WOOK;KIM, SEUNG HYUN |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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