| 摘要 |
PURPOSE: A formation method of semiconductor memory devices is provided to decrease a manufacturing temperature and to prevent a bowing by forming an SOG(Spin On Glass) as an interlayer dielectric using a PPP(Pre-Poly Plug) structure. CONSTITUTION: After forming gates by depositing and etching a poly layer(110), a tungsten silicide(120) and a nitride(130) on a semiconductor substrate(100), nitride spacers(140) are formed on both sidewalls of the gates. Then, a high temperature oxide is deposited on the resultant structure and a first photoresist is selectively deposited on a peripheral region(B). After performing an etching, a poly layer(170) is deposited on the entire surface of the resultant structure. After completely removing the high temperature oxide and the poly layer(170) except for the poly layer(170) between the gates on a cell region(A), an SOG(190) as an interlayer dielectric is deposited on the resultant structure. Then, a thermal treatment is performed on the SOG(190). At this time, the temperature of the SOG(190) is decreased to apply no influence to a transistor characteristic.
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