| 摘要 |
PURPOSE: A program method of a NOR flash memory device is provided to reduce a program time by inactivating a bit line selecting signal in which data indicating a program is not loaded. CONSTITUTION: In order to divide a program inspection result by bit line sets of predetermined bits, discriminate a program pass/fail, and program in a predetermined bit unit, when an inspection result of a selected bit line set is a pass, a bit line selecting signal corresponding to a program time of the selected bit line set is not generated. Each of the bit line sets indicates a unit bit number for a program according to a capacity of a charge pump which generates a bit line bias voltage. Each of the bit line sets changes according to a normal program, a free-program or an acceleration program which applies an external bit line bias voltage. The program method is used in a normal program algorithm, a free-program algorithm, and a post-program algorithm.
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