METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to prevent a void inside a lower electrode, by making a grain growth inside the lower electrode from being controlled by a sacrificial layer such that the grain growth is generated in a heat treatment process. CONSTITUTION: An insulation layer is formed on a semiconductor substrate(1) having a predetermined structure. A predetermined region of the insulation layer is etched to form a contact hole exposing a predetermined region of the semiconductor substrate. A contact plug(6) is formed to fill the contact hole. A lower electrode(8) is formed on the contact plug. After the sacrificial layer is formed on the lower electrode, a heat treatment process is performed. The sacrificial layer is removed, and a dielectric layer(10) is formed on the resultant structure including the lower electrode. An upper electrode is formed on the resultant structure including the dielectric layer.