| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to be used in a self-aligned silicide process, by thinly forming an oxide layer used as a hard mask so that the oxide layer is easily removed by a predetermined etch process. CONSTITUTION: A gate oxide layer(3) is formed on a semiconductor substrate(1) having a predetermined structure. Polycrystalline silicon is formed on the gate oxide layer. An oxide layer is formed on the polycrystalline silicon. The oxide layer is etched by using a predetermined photoresist layer pattern while a partial etch process is performed to leave a predetermined portion of the polycrystalline silicon. The photoresist layer is eliminated. After the remaining polycrystalline silicon is completely etched by using the oxide layer as a mask, the oxide layer is removed to form a gate electrode.
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