METHOD FOR CONTROLLING ETCH PROCESSING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A controlling method of an etching is provided to minimize free falling particles and to prevent particles from being dragged to a surface of a wafer by performing a particle removing step. CONSTITUTION: A particle removing step is performed to exhaust a residual helium gas and particles in a processing chamber by gradually decreasing an RF(Radio Frequency) power to a turn-off state using a step-down method and by simultaneously opening an auto-valve step by the step using a step-open method, while flowing a gas in the processing chamber after performing a surface etching of a wafer. At this time, an ESC(ElectroStatic Chuck techniques) voltage is previously decreased to the turn-off state before the RF power is decreased to the turn-off state using the step-down method.