| 摘要 |
PURPOSE: A slurry for polishing metal layers of semiconductor devices is provided to restrain decomposition of hydrogen peroxide by adding some 1-hydroxyethylene-1,1-diphosphonic acid. CONSTITUTION: A slurry for polishing metal layers of semiconductor devices is composed of a polishing agent having in the range of 0.10-10.00 weight%, an oxygenated water having in the range of 1.00-3.00 weight%, a ferrous nitrate having in the range of 0.03-0.10 weight%, an 1-hydroxyethylene-1,1-diphosphonic acid having in the range of 0.001-0.01 weight%, a pH controlling agent having in the range of 0.05-0.20 weight%, and a deionized water having in the range of 87.00-95.00 weight%.
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